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IPG20N06S4L-26A - Infineon

Description: MOSFET N-Ch 55V 20A TDSON-8

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IPG20N06S4L-26A Details

  • Manufacturer Part Number:

    IPG20N06S4L-26A

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    9

  • Avalanche Energy Rating (Eas):

    35 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IPG20N06S4L-26A Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPG20N06S4L-26A is -55°C to 175°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good thermal contact between the MOSFET and the heat sink.
  • The recommended gate resistor value for the IPG20N06S4L-26A is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • Yes, the IPG20N06S4L-26A is suitable for high-frequency switching applications up to 1 MHz, but the user should ensure that the gate drive circuitry is capable of handling the high-frequency switching.
  • The user should implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the MOSFET. A zener diode or a transient voltage suppressor (TVS) can be used for OVP, and a current sense resistor or a current monitor IC can be used for OCP.

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IPG20N06S4L-26A Overview

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