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IPG20N06S4L11AATMA1 - Infineon

Description: MOSFETs N-CHANNEL_55/60V

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IPG20N06S4L11AATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8-10-FP/ PG-TDSON-8-10-PO
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IPG20N06S4L11AATMA1 - Infineon  - 3D model - Other - PG-TDSON-8-10-FP/ PG-TDSON-8-10-PO
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IPG20N06S4L11AATMA1 Details

  • Manufacturer Part Number:

    IPG20N06S4L11AATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    165 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.0112 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IPG20N06S4L11AATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPG20N06S4L11AATMA1 is -55°C to 175°C.
  • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized (e.g., using a low-impedance gate driver).
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Keep the gate and source connections close together, and use a ground plane to reduce inductance.
  • Yes, the IPG20N06S4L11AATMA1 is suitable for high-frequency switching applications up to several hundred kHz, but ensure proper gate drive and PCB layout to minimize switching losses and parasitic inductance.
  • Use a suitable voltage regulator or overvoltage protection circuit to prevent voltage spikes, and consider adding overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IPG20N06S4L11AATMA1 Overview

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