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IPG20N06S4L26AATMA1 - Infineon

Description: MOSFET N-Ch 55V 20A TDSON-8

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IPG20N06S4L26AATMA1 - Infineon - PCB symbol
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PCB Footprints
IPG20N06S4L26AATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8-10
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3D Models
IPG20N06S4L26AATMA1 - Infineon - 3D model - Other - PG-TDSON-8-10
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IPG20N06S4L26AATMA1 Details

  • Manufacturer Part Number:

    IPG20N06S4L26AATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    35 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IPG20N06S4L26AATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPG20N06S4L26AATMA1 is -55°C to 175°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good thermal contact between the MOSFET and the heat sink.
  • The recommended gate resistor value for the IPG20N06S4L26AATMA1 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • Yes, the IPG20N06S4L26AATMA1 is suitable for high-frequency switching applications up to 1 MHz, but the user should ensure that the gate drive circuitry is capable of handling the high-frequency switching.
  • The user should implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the MOSFET. This can be achieved using zener diodes, TVS diodes, and current sense resistors.

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IPG20N06S4L26AATMA1 Overview

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