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IPG20N10S4L-22 - Infineon

Description: MOSFET MOSFET

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IPG20N10S4L-22 - Infineon - PCB symbol
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PCB Footprints
IPG20N10S4L-22 - Infineon PCB footprint - Other - Other - PG-TDSON-8-4_2022-1
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3D Models
IPG20N10S4L-22 - Infineon - 3D model - Other - PG-TDSON-8-4_2022-1
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IPG20N10S4L-22 Details

  • Manufacturer Part Number:

    IPG20N10S4L-22

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    130 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    84 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IPG20N10S4L-22 Frequently Asked Questions (FAQs)

  • The maximum junction temperature is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate resistor value is between 10 ohms and 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI).
  • Yes, the IPG20N10S4L-22 is suitable for high-reliability applications. It's built with a robust design and undergoes rigorous testing to ensure its reliability. However, it's essential to follow proper design and assembly guidelines to ensure the device operates within its specifications.
  • To protect the IPG20N10S4L-22 from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the workspace and equipment are also ESD-protected. Avoid touching the device's pins or exposing it to static electricity.

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IPG20N10S4L-22 Overview

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