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IPG20N10S4L-35 - Infineon

Description: 100V, Dual N-Ch, 35 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™-T2

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IPG20N10S4L-35 - Infineon - PCB symbol
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PCB Footprints
IPG20N10S4L-35 - Infineon PCB footprint - Other - Other - PG-TDSON-8-4_5
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3D Models
IPG20N10S4L-35 - Infineon - 3D model - Other - PG-TDSON-8-4_5
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IPG20N10S4L-35 Details

  • Manufacturer Part Number:

    IPG20N10S4L-35

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    60 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    43 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IPG20N10S4L-35 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPG20N10S4L-35 is 175°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, the device should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.
  • The maximum current rating of the IPG20N10S4L-35 is 20 A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
  • To protect the IPG20N10S4L-35 from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
  • The recommended gate drive voltage for the IPG20N10S4L-35 is between 10 V and 15 V, as specified in the datasheet. A higher gate drive voltage can improve the device's switching performance, but may also increase power consumption.

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IPG20N10S4L-35 Overview

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