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IPG20N10S4L22AATMA1 - Infineon

Description: MOSFETs MOSFET_(75V 120V(

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IPG20N10S4L22AATMA1 - Infineon  - 3D model
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IPG20N10S4L22AATMA1 Details

  • Manufacturer Part Number:

    IPG20N10S4L22AATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    130 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IPG20N10S4L22AATMA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good thermal contact between the device and the heat sink. Additionally, ensure good airflow around the device to prevent hot spots.
  • The recommended gate resistor value is between 10 ohms and 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI), but may increase switching losses.
  • Yes, the IPG20N10S4L22AATMA1 is suitable for high-reliability applications, such as automotive and industrial systems. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
  • To protect the device from ESD, handle the device by the body or use an anti-static wrist strap, and ensure the workspace is ESD-protected. Additionally, use ESD-protected packaging and storage materials to prevent damage during transportation and storage.

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IPG20N10S4L22AATMA1 Overview

Use the download button to access the IPG20N10S4L22AATMA1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IPG20, or try a keyword search, such as Power Field-Effect Transistors

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