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IPG20N10S4L35AATMA1 - Infineon

Description: MOSFET MOSFET_(75V 120V(

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IPG20N10S4L35AATMA1 - Infineon PCB footprint - Other - Other - IPG20N10S4L35AATMA1-1
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IPG20N10S4L35AATMA1 - Infineon  - 3D model - Other - IPG20N10S4L35AATMA1-1
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IPG20N10S4L35AATMA1 Details

  • Manufacturer Part Number:

    IPG20N10S4L35AATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    60 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IPG20N10S4L35AATMA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • Proper cooling is crucial for the IPG20N10S4L35AATMA1. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1°C/W. Also, consider using a thermal interface material to fill any gaps between the device and heat sink.
  • The recommended gate resistor value depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 ohms and 100 ohms is suitable for most applications. However, it's recommended to consult the application note or contact Infineon support for specific guidance.
  • Yes, the IPG20N10S4L35AATMA1 is suitable for high-reliability applications. It's manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
  • To protect the IPG20N10S4L35AATMA1 from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the workspace and equipment are ESD-safe, and use ESD-protective packaging and storage materials. Also, consider using ESD-protection devices or circuits in the application.

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IPG20N10S4L35AATMA1 Overview

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