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IPI041N12N3GAKSA1 - Infineon

Description: N-Channel 120 V 120A (Tc) 300W (Tc) Through Hole PG-TO262-3, 10V, 300W, -55°C ~ 175°C (TJ)

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PCB Footprints
IPI041N12N3GAKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO262-3_2025
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3D Models
IPI041N12N3GAKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO262-3_2025
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IPI041N12N3GAKSA1 Details

  • Manufacturer Part Number:

    IPI041N12N3GAKSA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-262AA

  • Package Description:

    GREEN, PLASTIC, TO-262, I2PAK-3

  • Pin Count:

    3

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    900 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    120 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0041 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPI041N12N3GAKSA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and heat sink design to ensure optimal thermal performance.
  • Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IGBT's gate-emitter voltage. The driver should also have a high common-mode transient immunity (CMTI) to ensure reliable operation.
  • The maximum allowed overcurrent is typically 2-3 times the rated current. To protect the module, use a fast-acting fuse or a current sensor with a shutdown circuit to detect overcurrent conditions and disconnect the power supply.
  • Follow Infineon's guidelines for EMC design, including using a shielded enclosure, minimizing loop areas, and using filters or chokes to reduce electromagnetic interference (EMI). Additionally, ensure that the PCB layout and component placement are optimized for EMC.
  • Store the module in a dry, cool place, away from direct sunlight and moisture. Handle the module by the edges, avoiding touching the pins or electrical contacts. Use an anti-static wrist strap or mat when handling the module to prevent electrostatic discharge (ESD) damage.

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IPI041N12N3GAKSA1 Overview

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