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IPI65R190C6 - Infineon

Description: Infineon IPI65R190C6 N-channel MOSFET Transistor, 20.2 A, 700 V, 3-Pin TO-262

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PCB Footprints
IPI65R190C6 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-262_2021
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3D Models
IPI65R190C6 - Infineon  - 3D model - Transistor Outline, Vertical - TO-262_2021
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IPI65R190C6 Details

  • Manufacturer Part Number:

    IPI65R190C6

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-262AA

  • Package Description:

    GREEN, PLASTIC, TO-262, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    485 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    66 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPI65R190C6 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPI65R190C6 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -20°C to 125°C for optimal performance and reliability.
  • Proper cooling is crucial for the IPI65R190C6. Ensure good thermal contact between the device and a heat sink, and use a thermal interface material (TIM) to fill any gaps. The heat sink should be designed to dissipate heat efficiently, and the system should provide adequate airflow to prevent overheating.
  • For optimal performance and reliability, follow Infineon's recommended PCB layout guidelines, including using a solid ground plane, minimizing trace lengths and widths, and placing decoupling capacitors close to the device. Additionally, ensure that the PCB material and thickness are suitable for the device's power dissipation requirements.
  • To protect the IPI65R190C6 from ESD, handle the device with ESD-safe materials and tools, and ensure that the workspace is ESD-protected. Use ESD protection devices, such as TVS diodes, on the PCB to absorb ESD events. Additionally, follow proper handling and storage procedures to prevent ESD damage.
  • The recommended gate drive circuits and components for the IPI65R190C6 depend on the specific application and requirements. However, as a general guideline, use a gate driver IC with a high current capability and a low output impedance to ensure fast switching times and minimal power loss. Choose gate resistors and capacitors that are suitable for the device's switching frequency and voltage ratings.

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IPI65R190C6 Overview

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Part Image IPI65R190C6XKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA