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IPI90N04S4-02 - Infineon

Description: Infineon IPI90N04S4-02 N-channel MOSFET Transistor, 90 A, 40 V, 3-Pin TO-262

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IPI90N04S4-02 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO262-3
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3D Models
IPI90N04S4-02 - Infineon  - 3D model - Transistor Outline, Vertical - TO262-3
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IPI90N04S4-02 Details

  • Manufacturer Part Number:

    IPI90N04S4-02

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-262AA

  • Pin Count:

    3

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    475 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    90 A

  • Drain-source On Resistance-Max:

    0.0025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    360 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPI90N04S4-02 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPI90N04S4-02 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within a temperature range of -20°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) and ensure the heat sink is securely fastened to the device. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • For optimal performance, it's recommended to follow a 2-layer or 4-layer PCB layout with a solid ground plane and a separate power plane. Keep the power traces short and wide, and ensure the decoupling capacitors are placed close to the device. Refer to Infineon's application notes for more detailed guidelines.
  • Yes, the IPI90N04S4-02 is suitable for high-reliability applications. It's designed to meet the requirements of automotive and industrial applications, and it's qualified according to AEC-Q101. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
  • To protect the IPI90N04S4-02 from ESD, handle the device with ESD-safe materials, and ensure the workspace is ESD-protected. Use ESD-safe packaging and storage materials, and follow proper handling and assembly procedures to prevent ESD damage.

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IPI90N04S4-02 Overview

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Part Image IPI90N04S402AKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 90A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA