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IPL60R060CFD7AUMA1 - Infineon

Description: MOSFET HIGH POWER_NEW

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IPL60R060CFD7AUMA1 - Infineon PCB footprint - Other - Other - PG-VSON-4, ThinPAK8x8
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IPL60R060CFD7AUMA1 - Infineon  - 3D model - Other - PG-VSON-4, ThinPAK8x8
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IPL60R060CFD7AUMA1 Details

  • Manufacturer Part Number:

    IPL60R060CFD7AUMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    VSON-4

  • Country Of Origin:

    Austria, Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2A

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    219 W

  • Pulsed Drain Current-Max (IDM):

    153 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPL60R060CFD7AUMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPL60R060CFD7AUMA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the module within a temperature range of 25°C to 125°C for optimal performance and reliability.
  • To ensure proper thermal management, it's essential to provide adequate heat sinking and cooling for the IPL60R060CFD7AUMA1. This can be achieved by using a heat sink with a thermal resistance of ≤ 0.5 K/W, and ensuring good thermal contact between the module and the heat sink. Additionally, the module should be operated within the recommended temperature range to prevent overheating.
  • The recommended gate resistance for the IPL60R060CFD7AUMA1 is between 10 Ω and 100 Ω. A gate resistance within this range helps to prevent oscillations and ensures stable operation of the IGBT.
  • Yes, the IPL60R060CFD7AUMA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched and synchronized to prevent uneven current sharing and thermal runaway.
  • The recommended dead time for the IPL60R060CFD7AUMA1 is typically in the range of 1-2 μs. This ensures that the IGBT is fully turned off before the diode starts conducting, preventing cross-conduction and reducing electromagnetic interference (EMI).

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IPL60R060CFD7AUMA1 Overview

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