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IPL60R140CFD7AUMA1 - Infineon

Description: Power MOSFET, N Channel, 600 V, 18 A, 0.112 ohm, VSON, Surface Mount

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IPL60R140CFD7AUMA1 - Infineon PCB footprint - Other - Other - ThinPAK8x8_2023
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IPL60R140CFD7AUMA1 - Infineon  - 3D model - Other - ThinPAK8x8_2023
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IPL60R140CFD7AUMA1 Details

  • Manufacturer Part Number:

    IPL60R140CFD7AUMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    78 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.14 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • JESD-30 Code:

    R-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2A

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    106 W

  • Pulsed Drain Current-Max (IDM):

    66 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPL60R140CFD7AUMA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
  • The selection of a gate driver depends on the specific application requirements, such as voltage, current, and switching frequency. Infineon recommends using their EiceDRIVER series of gate drivers, which are optimized for their MOSFETs. The EiceDRIVER 1EDC20I12BAUMA1 is a suitable option for the IPL60R140CFD7AUMA1.
  • The maximum allowed voltage derating for the IPL60R140CFD7AUMA1 is 10% of the maximum rated voltage (VDS) at a junction temperature of 150°C. This means that the maximum allowed voltage derating is 14V (140V x 0.1).
  • Proper cooling of the MOSFET can be achieved by using a heat sink with a thermal resistance of less than 1.5 K/W, ensuring good thermal contact between the MOSFET and heat sink, and providing adequate airflow around the heat sink. The thermal resistance of the heat sink can be calculated using Infineon's thermal design guide, AN2013-03.
  • The IPL60R140CFD7AUMA1 is a sensitive electronic component and requires proper storage and handling to prevent damage. It should be stored in a dry, cool place, away from direct sunlight and moisture. Handling should be done with anti-static precautions, such as using an anti-static wrist strap or mat, to prevent electrostatic discharge damage.

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IPL60R140CFD7AUMA1 Overview

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