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IPL60R210P6AUMA1 - Infineon

Description: MOSFET LOW POWER PRICE/PERFORM

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IPL60R210P6AUMA1 - Infineon PCB footprint - Other - Other - ThinPAK8x8
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IPL60R210P6AUMA1 - Infineon  - 3D model - Other - ThinPAK8x8
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IPL60R210P6AUMA1 Details

  • Manufacturer Part Number:

    IPL60R210P6AUMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    419 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain-source On Resistance-Max:

    0.21 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2A

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    52 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPL60R210P6AUMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPL60R210P6AUMA1 is 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's drain pad, and ensure the heat sink is securely fastened to the device. Additionally, consider the airflow and thermal management of the overall system to prevent hotspots.
  • The recommended gate drive voltage for the IPL60R210P6AUMA1 is between 10V and 15V. However, the device can tolerate gate voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device and ensure optimal performance.
  • Yes, the IPL60R210P6AUMA1 is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, it's essential to consider the device's switching losses, parasitic inductances, and layout-related issues to ensure reliable operation at high frequencies.
  • To protect the IPL60R210P6AUMA1 from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IPL60R210P6AUMA1 Overview

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