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IPN10EL-S - Infineon

Description: Gate Drivers MOSFET

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IPN10EL-S - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - PG-SSOP-14-1,-2,-3-PO
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IPN10EL-S - Infineon  - 3D model - Small Outline Packages - PG-SSOP-14-1,-2,-3-PO
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IPN10EL-S Details

  • Manufacturer Part Number:

    IPN10EL-S

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SSOP-14

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • High Side Driver:

    YES

  • Input Characteristics:

    STANDARD

  • Interface IC Type:

    HALF BRIDGE BASED MOSFET DRIVER

  • JESD-30 Code:

    R-PDSO-G14

  • Length:

    3.9 mm

  • Number of Functions:

    1

  • Number of Terminals:

    14

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Characteristics:

    PUSH-PULL

  • Output Peak Current Limit-Nom:

    0.4 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HLSSOP

  • Package Equivalence Code:

    SSOP14,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE, SHRINK PITCH

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    1.7 mm

  • Supply Current-Max:

    35 mA

  • Supply Voltage-Max:

    40 V

  • Supply Voltage-Min:

    4 V

  • Supply Voltage-Nom:

    18 V

  • Supply Voltage1-Max:

    40 V

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.65 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Turn-off Time:

    0.25 µs

  • Turn-on Time:

    0.25 µs

  • Width:

    4.9 mm

IPN10EL-S Frequently Asked Questions (FAQs)

  • Infineon recommends a PCB layout with a large copper area connected to the drain pad (pin 3) to dissipate heat efficiently. A minimum of 1 oz copper thickness and a thermal via under the drain pad is recommended.
  • The IPN10EL-S requires a bias voltage of 5V to 15V on the gate (pin 1) with respect to the source (pin 2) to operate in the saturation region. A gate resistor of 1 kΩ to 10 kΩ is recommended to limit the gate current.
  • The maximum allowed power dissipation of IPN10EL-S is 30W. However, this value can be derated based on the ambient temperature and the thermal resistance of the PCB and heat sink.
  • Yes, IPN10EL-S is suitable for high-frequency switching applications up to 100 kHz. However, the switching frequency should be limited to ensure the device remains within its safe operating area (SOA).
  • Infineon recommends handling IPN10EL-S with ESD-protective equipment and following proper ESD handling procedures to prevent damage. A human body model (HBM) of 2 kV and a machine model (MM) of 200 V are recommended.

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