SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE, SHRINK PITCH
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Screening Level:
AEC-Q100
Seated Height-Max:
1.7 mm
Supply Current-Max:
35 mA
Supply Voltage-Max:
40 V
Supply Voltage-Min:
4 V
Supply Voltage-Nom:
18 V
Supply Voltage1-Max:
40 V
Surface Mount:
YES
Terminal Form:
GULL WING
Terminal Pitch:
0.65 mm
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Turn-off Time:
0.25 µs
Turn-on Time:
0.25 µs
Width:
4.9 mm
IPN10EL-S Frequently Asked Questions (FAQs)
Infineon recommends a PCB layout with a large copper area connected to the drain pad (pin 3) to dissipate heat efficiently. A minimum of 1 oz copper thickness and a thermal via under the drain pad is recommended.
The IPN10EL-S requires a bias voltage of 5V to 15V on the gate (pin 1) with respect to the source (pin 2) to operate in the saturation region. A gate resistor of 1 kΩ to 10 kΩ is recommended to limit the gate current.
The maximum allowed power dissipation of IPN10EL-S is 30W. However, this value can be derated based on the ambient temperature and the thermal resistance of the PCB and heat sink.
Yes, IPN10EL-S is suitable for high-frequency switching applications up to 100 kHz. However, the switching frequency should be limited to ensure the device remains within its safe operating area (SOA).
Infineon recommends handling IPN10EL-S with ESD-protective equipment and following proper ESD handling procedures to prevent damage. A human body model (HBM) of 2 kV and a machine model (MM) of 200 V are recommended.
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IPN10EL-S Overview
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