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IPN50R3K0CE - Infineon

Description: ID=1.7A, IDpuls=4.1A, Mounting=SMT, Temperature =-40°C, Ptot=5W, Package=SOT-223, QG=4.3nC, Qgd=2.6nC, RDS=3000 mΩ, RthJA=75K/W, VDS=500V, VGS=2.5V,3.5V

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IPN50R3K0CE - Infineon PCB footprint - Other - Other - IPN50R3K0CE-4
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IPN50R3K0CE Details

  • Manufacturer Part Number:

    IPN50R3K0CE

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-06-13

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Terminal Finish:

    Tin (Sn)

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

IPN50R3K0CE Frequently Asked Questions (FAQs)

  • The maximum allowed voltage imbalance is ±10% of the nominal voltage. Exceeding this limit may lead to reduced module lifetime or even damage.
  • Infineon recommends a heat sink with a thermal resistance of ≤ 0.5 K/W. Ensure good thermal contact between the module and heat sink using a suitable thermal interface material. Additionally, follow the recommended PCB layout and thermal management guidelines in the datasheet.
  • The recommended gate resistance (Rg) is between 1 Ω and 10 Ω. A lower Rg value can reduce switching losses, but may increase the risk of oscillations or ringing. A higher Rg value can reduce oscillations, but may increase switching losses.
  • Yes, the IPN50R3K0CE can be paralleled to increase power output. However, ensure that the modules are properly synchronized, and the current sharing is balanced between the parallel modules. Consult the datasheet and application notes for more information.
  • The maximum allowed dv/dt is 10 kV/μs. Exceeding this limit may lead to reduced module lifetime or even damage. Ensure that the gate driver and system design comply with this requirement.

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