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IPN50R650CEATMA1 - Infineon

Description: MOSFET CONSUMER

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IPN50R650CEATMA1 - Infineon - PCB symbol
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IPN50R650CEATMA1 - Infineon PCB footprint - Other - Other - IPN50R650CEATMA1-1
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IPN50R650CEATMA1 Details

  • Manufacturer Part Number:

    IPN50R650CEATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOT-223, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    111 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    102 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.65 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    5 W

  • Pulsed Drain Current-Max (IDM):

    19 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPN50R650CEATMA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for IPN50R650CEATMA1 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • Proper cooling is crucial for the IGBT's reliability. Ensure good thermal contact between the IGBT and the heat sink, and use a thermal interface material if necessary. Also, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for IPN50R650CEATMA1 is between 10 ohms and 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency.
  • Yes, IPN50R650CEATMA1 can be used in a parallel configuration, but it's essential to ensure that the IGBTs are matched in terms of their electrical characteristics and thermal performance. Also, a common gate drive and proper thermal management are crucial for reliable operation.
  • The maximum allowable voltage transient for IPN50R650CEATMA1 is specified as 650V + 100V (transient voltage). However, it's recommended to limit the voltage transient to 100V to ensure reliable operation and prevent damage to the IGBT.

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IPN50R650CEATMA1 Overview

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