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IPN60R600P7SATMA1 - Infineon

Description: MOSFET N-CHANNEL 600V 6A SOT223

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IPN60R600P7SATMA1 - Infineon PCB footprint - Other - Other - PG-SOT223-3-1_2021
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IPN60R600P7SATMA1 - Infineon  - 3D model - Other - PG-SOT223-3-1_2021
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IPN60R600P7SATMA1 Details

  • Manufacturer Part Number:

    IPN60R600P7SATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-223, 3 PIN

  • Country Of Origin:

    Austria, Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    17 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    7 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPN60R600P7SATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPN60R600P7SATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
  • The recommended gate resistor value for IPN60R600P7SATMA1 is between 10 Ω to 20 Ω, depending on the specific application and switching frequency.
  • Yes, IPN60R600P7SATMA1 can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are properly synchronized and the thermal management is adequate.
  • The maximum allowable voltage transient for IPN60R600P7SATMA1 is ±10% of the rated voltage, with a maximum duration of 100 ms.

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