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IPN95R3K7P7 - Infineon

Description: N-Channel Power MOSFET VDS max: 950V, RDS (on) max: 3.7Ω, Qg,typ: 6nC, ID,pulse: 2A, Eoss @ 500V: 0.5µJ, SMT, Package: PG-SOT223

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IPN95R3K7P7 - Infineon PCB footprint - Other - Other - IPN95R3K7P7
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IPN95R3K7P7 - Infineon  - 3D model - Other - IPN95R3K7P7
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IPN95R3K7P7 Details

  • Manufacturer Part Number:

    IPN95R3K7P7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-223, 3 PIN

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    950 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    3.7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    6 W

  • Pulsed Drain Current-Max (IDM):

    5 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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IPN95R3K7P7 Overview

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