Please enter a minimum 3 letters or numbers
Technical Content
Part Image

IPP015N04NGXKSA1 - Infineon

Description: Infineon IPP015N04NGXKSA1 N-channel MOSFET Transistor, 120 A, 40 V, 3-Pin TO-220

Download IPP015N04NGXKSA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
IPP015N04NGXKSA1 - Infineon - PCB symbol
click to zoom
PCB Footprints
IPP015N04NGXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO2204
click to zoom
3D Models
IPP015N04NGXKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO2204
click to zoom

IPP015N04NGXKSA1 Details

  • Manufacturer Part Number:

    IPP015N04NGXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    865 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP015N04NGXKSA1 Frequently Asked Questions (FAQs)

  • The IPP015N04NGXKSA1 has an operating temperature range of -55°C to 175°C.
  • To minimize switching losses, ensure the gate-source voltage (Vgs) is within the recommended range (typically 4.5V to 15V), and use a gate driver with a low output impedance to reduce ringing and oscillations.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Keep the gate and source connections as close as possible to the MOSFET, and use a solid ground plane to reduce inductance.
  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect excessive current, and implement a shutdown mechanism to prevent damage.
  • The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω to 100Ω. A higher value can help reduce oscillations, but may increase switching times.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPP015N04NGXKSA1 Overview

Use the download button to access the IPP015N04NGXKSA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IPP01, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPP015N04NGXKSA1

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

IPP015N04NGXKSA1 Alternates

Showing results

Image Part Number Model
Part Image IPP015N04NG Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB