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IPP020N06N - Infineon

Description: Infineon IPP020N06N N-channel MOSFET Transistor, 120 A, Minimum of 60 V, 3-Pin TO-220

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PCB Footprints
IPP020N06N - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220-3
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IPP020N06N - Infineon  - 3D model - Transistor Outline, Vertical - TO220-3
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IPP020N06N Details

  • Manufacturer Part Number:

    IPP020N06N

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    420 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    29 A

  • Drain-source On Resistance-Max:

    0.002 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP020N06N Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IPP020N06N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to consult with Infineon's application notes or contact their support team for more information.
  • To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tj). Use a heat sink or thermal interface material to reduce the thermal resistance between the device and the ambient environment. Also, ensure good airflow and avoid blocking airflow around the device. Consult the datasheet and Infineon's application notes for more information on thermal design considerations.
  • The recommended gate resistor value for the IPP020N06N depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 Ω to 100 Ω is commonly used. However, it's recommended to consult with Infineon's application notes or contact their support team for more specific guidance on gate resistor selection.
  • Yes, the IPP020N06N is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate driver is capable of providing a fast switching signal. Additionally, consider the device's thermal capabilities and ensure proper cooling to prevent overheating.
  • To protect the IPP020N06N from electrostatic discharge (ESD), follow proper handling and storage procedures, such as using anti-static bags or containers, and grounding yourself before handling the device. In the circuit design, consider adding ESD protection components, such as TVS diodes or ESD protection arrays, to prevent ESD damage.

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IPP020N06N Overview

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