Part Image

IPP020N08N5 - Infineon

Description: MOSFET N-Ch 80V 120A TO220-3

Download IPP020N08N5 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IPP020N08N5 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG TO220-3
click to zoom
3D Models
IPP020N08N5 - Infineon  - 3D model - Transistor Outline, Vertical - PG TO220-3
click to zoom

IPP020N08N5 Details

  • Manufacturer Part Number:

    IPP020N08N5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1228 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.002 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP020N08N5 Frequently Asked Questions (FAQs)

  • The maximum SOA for the IPP020N08N5 is typically defined by the device's voltage and current ratings. However, it's recommended to consult Infineon's application notes and thermal modeling tools to ensure the device operates within a safe operating area for a specific application.
  • Proper cooling can be achieved by providing a sufficient heat sink, ensuring good thermal contact between the device and heat sink, and optimizing the PCB layout for thermal dissipation. Consult Infineon's thermal management guidelines and application notes for more information.
  • The recommended gate drive voltage for the IPP020N08N5 is typically between 10V to 15V, depending on the specific application and switching frequency. However, it's essential to consult the datasheet and application notes for specific guidance on gate drive voltage and switching frequency.
  • To minimize EMI, ensure proper PCB layout, use shielding, and implement filtering and decoupling techniques. Additionally, follow Infineon's EMI reduction guidelines and application notes for specific recommendations.
  • The maximum allowed dv/dt for the IPP020N08N5 is typically around 10V/ns, but this can vary depending on the specific application and operating conditions. Consult the datasheet and application notes for specific guidance on dv/dt and switching behavior.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPP020N08N5 Overview

Use the download button to access the IPP020N08N5 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IPP02, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPP020N08N5

Showing 0 results