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IPP020N08N5AKSA1 - Infineon

Description: INFINEON - IPP020N08N5AKSA1 - MOSFET, N-CH, 80V, 120A, TO-220

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IPP020N08N5AKSA1 - Infineon - PCB symbol
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PCB Footprints
IPP020N08N5AKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220
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3D Models
IPP020N08N5AKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO220
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IPP020N08N5AKSA1 Details

  • Manufacturer Part Number:

    IPP020N08N5AKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1228 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.002 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP020N08N5AKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPP020N08N5AKSA1 is 175°C, as specified in the datasheet.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
  • For optimal performance, use a PCB layout that minimizes parasitic inductance and resistance. Keep the drain and source pins as close as possible, and use a solid ground plane to reduce electromagnetic interference (EMI).
  • Yes, the IPP020N08N5AKSA1 is suitable for high-frequency switching applications up to 1 MHz, thanks to its low gate charge and internal gate resistance.
  • Use a suitable voltage regulator or overvoltage protection circuit to prevent voltage spikes, and consider adding a current sense resistor and overcurrent protection circuit to prevent excessive current.

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IPP020N08N5AKSA1 Overview

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