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IPP029N06N - Infineon

Description: Infineon IPP029N06N N-channel MOSFET Transistor, 100 A, 60 V, 3-Pin TO-220

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PCB Footprints
IPP029N06N - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220-3
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IPP029N06N - Infineon  - 3D model - Transistor Outline, Vertical - TO220-3
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IPP029N06N Details

  • Manufacturer Part Number:

    IPP029N06N

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    110 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.0029 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP029N06N Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IPP029N06N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to consult with Infineon's application notes or contact their support team for more information.
  • To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tj). Use a heat sink or thermal interface material to reduce the thermal resistance between the device and the ambient environment. Also, ensure good airflow and avoid blocking the airflow around the device. Consult the datasheet and Infineon's application notes for more information on thermal design considerations.
  • The recommended gate resistor value for the IPP029N06N depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 Ω to 100 Ω is commonly used. However, it's recommended to consult with Infineon's application notes or contact their support team for more specific guidance on gate resistor selection.
  • The IPP029N06N is a standard industrial-grade device, but it may not meet the specific requirements for high-reliability or automotive applications. For such applications, consider using devices with specific automotive or high-reliability qualifications, such as AEC-Q101 or ISO 26262. Consult with Infineon's support team or application notes for more information on device selection for high-reliability or automotive applications.
  • To handle ESD protection for the IPP029N06N, follow proper handling and storage procedures to prevent ESD damage. Use ESD-protective packaging, wrist straps, and mats during device handling. Ensure that the device is properly grounded during assembly and testing. Consult the datasheet and Infineon's application notes for more information on ESD protection and handling guidelines.

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