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IPP030N10N3GXKSA1 - Infineon

Description: MOSFET N-Ch 100V 100A TO220-3

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IPP030N10N3GXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3_a
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IPP030N10N3GXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-3_a
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IPP030N10N3GXKSA1 Details

  • Manufacturer Part Number:

    IPP030N10N3GXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.003 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP030N10N3GXKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPP030N10N3GXKSA1 is -55°C to 175°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good thermal contact between the MOSFET and the heat sink.
  • The recommended gate resistor value for the IPP030N10N3GXKSA1 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • Yes, the IPP030N10N3GXKSA1 is suitable for high-frequency switching applications up to 1 MHz, but the user should ensure that the MOSFET is properly driven and that the layout is optimized for high-frequency operation.
  • The user should ensure that the MOSFET is protected from overvoltage and overcurrent by using a suitable voltage regulator and current limiter, and by implementing overvoltage and overcurrent protection circuits.

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IPP030N10N3GXKSA1 Overview

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Part Image IPP030N10N3G Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IPP030N10N3GHKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB