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IPP037N08N3GXKSA1 - Infineon

Description: MOSFET N-Ch 80V 100A TO220-3

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PCB Footprints
IPP037N08N3GXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG TO220-3
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3D Models
IPP037N08N3GXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG TO220-3
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IPP037N08N3GXKSA1 Details

  • Manufacturer Part Number:

    IPP037N08N3GXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    510 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.00375 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    214 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP037N08N3GXKSA1 Frequently Asked Questions (FAQs)

  • The IPP037N08N3GXKSA1 can operate from -40°C to 150°C, making it suitable for high-temperature applications.
  • Proper cooling can be achieved through a combination of heat sinks, thermal interfaces, and airflow. The device's thermal resistance (Rth) is 2.5 K/W, and the maximum allowed junction temperature is 150°C.
  • The recommended gate resistor value for the IPP037N08N3GXKSA1 is between 10 Ω and 100 Ω, depending on the specific application and switching frequency.
  • Yes, the IPP037N08N3GXKSA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications in the automotive industry.
  • The device has built-in protection features such as overvoltage protection (OVP) and overcurrent protection (OCP). Additionally, external protection circuits can be implemented to further protect the device.

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IPP037N08N3GXKSA1 Overview

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