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IPP039N10N5AKSA1 - Infineon

Description: MOSFET DIFFERENTIATED MOSFETS

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IPP039N10N5AKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3 HEIGHT 4.57
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3D Models
IPP039N10N5AKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-3 HEIGHT 4.57
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IPP039N10N5AKSA1 Details

  • Manufacturer Part Number:

    IPP039N10N5AKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    196 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP039N10N5AKSA1 Frequently Asked Questions (FAQs)

  • The IPP039N10N5AKSA1 can operate from -40°C to 150°C, making it suitable for high-temperature applications.
  • Proper cooling can be achieved through a combination of heat sinks, thermal interfaces, and airflow. The device's thermal resistance (Rth) is 1.5 K/W, and the maximum allowed junction temperature is 150°C.
  • The recommended gate resistor value for the IPP039N10N5AKSA1 is between 10 Ω and 100 Ω, depending on the specific application and switching frequency.
  • Yes, the IPP039N10N5AKSA1 is suitable for high-frequency switching applications up to 100 kHz, thanks to its low gate charge and internal freewheeling diode.
  • To protect the device, use a suitable overvoltage protection circuit and consider adding overcurrent protection, such as a fuse or current sense resistor, to prevent damage from excessive current.

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IPP039N10N5AKSA1 Overview

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