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IPP051N15N5 - Infineon

Description: MOSFET DIFFERENTIATED MOSFETS

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PCB Footprints
IPP051N15N5 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-3
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IPP051N15N5 - Infineon  - 3D model - Transistor Outline, Vertical - TO-220-3
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IPP051N15N5 Details

  • Manufacturer Part Number:

    IPP051N15N5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    230 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0051 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Reference Standard:

    IEC-61249-2-21; IEC-68-1

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP051N15N5 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPP051N15N5 is 175°C, as specified in the datasheet. However, it's recommended to derate the power dissipation to ensure reliable operation.
  • To ensure the MOSFET is fully turned on, the gate-source voltage (VGS) should be at least 10V, and the gate current should be sufficient to charge the gate capacitance quickly. A gate driver IC can be used to provide a high current pulse to the gate.
  • A good PCB layout for the IPP051N15N5 should minimize the parasitic inductance and resistance of the PCB traces. This can be achieved by using wide, short traces for the drain and source connections, and placing the MOSFET close to the decoupling capacitors.
  • Yes, the IPP051N15N5 is suitable for high-frequency switching applications up to several hundred kHz. However, the switching losses and parasitic capacitances should be carefully considered to ensure efficient operation.
  • To protect the IPP051N15N5 from overvoltage and overcurrent, a voltage clamp or a zener diode can be used to limit the voltage across the MOSFET. Additionally, a current sense resistor and a fuse can be used to detect and interrupt overcurrent conditions.

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IPP051N15N5 Overview

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