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IPP052NE7N3GXKSA1 - Infineon

Description: INFINEON - IPP052NE7N3GXKSA1 - Power MOSFET, N Channel, 75 V, 80 A, 0.0047 ohm, TO-220, Through Hole

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PCB Footprints
IPP052NE7N3GXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3-2022
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3D Models
IPP052NE7N3GXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-3-2022
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IPP052NE7N3GXKSA1 Details

  • Manufacturer Part Number:

    IPP052NE7N3GXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    370 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    75 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0052 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP052NE7N3GXKSA1 Frequently Asked Questions (FAQs)

  • The IPP052NE7N3GXKSA1 can operate from -40°C to 150°C, with a maximum junction temperature of 150°C.
  • Proper cooling can be achieved through a combination of heat sinks, thermal interfaces, and airflow. The device's thermal resistance (RthJA) is 2.5 K/W, and the maximum power dissipation is 125 W.
  • A 2-layer or 4-layer PCB is recommended, with a solid ground plane and a separate power plane. The device's pins should be connected to the PCB using a low-inductance path, and decoupling capacitors should be placed close to the device.
  • The device has built-in overvoltage protection (OVP) and overcurrent protection (OCP) features. Additionally, external protection circuits can be implemented using components such as TVS diodes and fuses.
  • The recommended gate drive voltage is 15 V, with a maximum gate-source voltage of ±20 V.

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IPP052NE7N3GXKSA1 Overview

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