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IPP060N06N - Infineon

Description: Infineon IPP060N06N N-channel MOSFET Transistor, 45 A, 60 V, 3-Pin TO-220

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PCB Footprints
IPP060N06N - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-3
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3D Models
IPP060N06N - Infineon  - 3D model - Transistor Outline, Vertical - TO-220-3
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IPP060N06N Details

  • Manufacturer Part Number:

    IPP060N06N

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    60 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.006 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP060N06N Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IPP060N06N is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and the maximum allowed voltage and current should not exceed the rated values.
  • To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tj). Use a heat sink or thermal interface material to reduce the thermal resistance between the device and the ambient environment. Also, ensure good airflow and avoid blocking airflow around the device.
  • The recommended gate resistor value depends on the specific application and switching frequency. A general guideline is to use a gate resistor between 10 Ω to 100 Ω to limit the gate current and prevent oscillations. However, the optimal value may need to be experimentally determined based on the specific design requirements.
  • Yes, the IPP060N06N is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, the maximum switching frequency is limited by the device's internal capacitances and the external circuit's parasitic inductances. Ensure that the device is properly driven and the layout is optimized to minimize parasitic inductances.
  • To protect the IPP060N06N from ESD, follow proper handling and storage procedures. Use anti-static packaging, wrist straps, and mats to prevent static electricity buildup. Ensure that the device is properly grounded during handling and assembly. Additionally, consider adding ESD protection devices, such as TVS diodes, in the circuit design.

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IPP060N06N Overview

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