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IPP065N04NG - Infineon

Description: N-Channel 40 V 50A (Tc) 68W (Tc) Through Hole PG-TO220-3

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PCB Footprints
IPP065N04NG - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3-1_2022
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3D Models
IPP065N04NG - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-3-1_2022
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IPP065N04NG Details

  • Manufacturer Part Number:

    IPP065N04NG

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    50 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.0065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    68 W

  • Pulsed Drain Current-Max (IDM):

    350 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP065N04NG Frequently Asked Questions (FAQs)

  • The SOA is not explicitly stated in the datasheet, but it can be calculated using the device's thermal resistance, maximum junction temperature, and voltage/current ratings. Infineon provides an SOA calculator tool to help with this calculation.
  • Proper cooling requires a good thermal interface between the device and the heat sink, as well as adequate airflow. Ensure the heat sink is properly mounted, and consider using thermal interface materials like thermal paste or thermal tape. Also, follow the recommended PCB layout and thermal design guidelines from Infineon.
  • The recommended gate drive voltage is typically between 10V to 15V, and the current depends on the specific application and switching frequency. A general rule of thumb is to use a gate current of 1A to 5A for high-frequency switching applications. Consult the datasheet and application notes for more specific guidance.
  • To prevent shoot-through and cross-conduction, ensure proper dead-time insertion between the high-side and low-side switches, and use a suitable gate drive circuit with adequate voltage and current capability. Also, consider using a dedicated half-bridge driver IC with built-in dead-time control and protection features.
  • The IPP065N04NG has an ESD rating of HBM 2kV and MM 200V. To prevent ESD damage, handle the device with ESD-protected equipment, wear an ESD strap, and follow proper handling and storage procedures. Also, ensure the PCB design includes adequate ESD protection components and layout guidelines.

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IPP065N04NG Overview

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