Part Image

IPP075N15N3G - Infineon

Description: 150V,100A,N Channel Power MOSFET

Download IPP075N15N3G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IPP075N15N3G - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3 HEIGHT 4.57
click to zoom
3D Models
IPP075N15N3G - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-3 HEIGHT 4.57
click to zoom

IPP075N15N3G Details

  • Manufacturer Part Number:

    IPP075N15N3G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    780 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP075N15N3G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPP075N15N3G is -40°C to 150°C.
  • To ensure reliability, follow the recommended operating conditions, use a suitable heat sink, and ensure proper thermal management. Additionally, consider using a gate driver with a high current capability and a low voltage drop.
  • The recommended gate resistor value for the IPP075N15N3G is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, the IPP075N15N3G can be used in a parallel configuration to increase current handling. However, ensure that the devices are properly matched, and the gate drive and layout are designed to minimize differences in switching times and voltage drops.
  • Use a suitable overvoltage protection circuit, such as a zener diode or a transient voltage suppressor, and consider adding overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPP075N15N3G Overview

Use the download button to access the IPP075N15N3G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IPP07, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPP075N15N3G

Showing 0 results

IPP075N15N3G Alternates

Showing results

Image Part Number Model
Part Image IPP075N15N3GHKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB