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IPP110N20N3GXKSA1 - Infineon

Description: N-Channel MOSFET, 88 A, 200 V, 3-Pin TO-220 Infineon IPP110N20N3GXKSA1

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IPP110N20N3GXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220
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IPP110N20N3GXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220
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IPP110N20N3GXKSA1 Details

  • Manufacturer Part Number:

    IPP110N20N3GXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    560 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    88 A

  • Drain-source On Resistance-Max:

    0.011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    352 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP110N20N3GXKSA1 Frequently Asked Questions (FAQs)

  • The IPP110N20N3GXKSA1 can operate safely between -40°C to 150°C, but the optimal operating temperature range is between 25°C to 125°C for maximum performance and reliability.
  • The device has a thermal pad on the bottom of the package, which should be connected to a heat sink or a thermal interface material to ensure proper heat dissipation. A thermal resistance of less than 1°C/W is recommended.
  • The recommended gate drive voltage for the IPP110N20N3GXKSA1 is between 10V to 15V, with a maximum gate-source voltage of 20V.
  • It is recommended to use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage. Additionally, a current sense resistor and a fuse can be used to detect and prevent overcurrent conditions.
  • The maximum allowed dv/dt for the IPP110N20N3GXKSA1 is 10kV/μs, but it's recommended to limit it to 5kV/μs or less to ensure reliable operation.

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IPP110N20N3GXKSA1 Overview

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