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IPP120N20NFDAKSA1 - Infineon

Description: MOSFET N-Ch 200V 84A TO220-3

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PCB Footprints
IPP120N20NFDAKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - OutlinePG-TO220-3
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3D Models
IPP120N20NFDAKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - OutlinePG-TO220-3
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IPP120N20NFDAKSA1 Details

  • Manufacturer Part Number:

    IPP120N20NFDAKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220, 3 PIN

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    375 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    84 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    336 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPP120N20NFDAKSA1 Frequently Asked Questions (FAQs)

  • The IPP120N20NFDAKSA1 can operate safely between -40°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
  • The device has an exposed pad on the bottom for heat dissipation. Ensure good thermal contact between the pad and a heat sink or PCB thermal plane. Use thermal interface material if necessary.
  • The recommended gate resistor value is between 10Ω to 100Ω, depending on the specific application and switching frequency. A higher value can reduce EMI, but may increase switching losses.
  • Yes, the IPP120N20NFDAKSA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
  • Use a suitable overvoltage protection circuit, such as a TVS diode or a zener diode, to clamp voltage spikes. Implement overcurrent protection using a fuse or a current sense resistor with a monitoring circuit.

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IPP120N20NFDAKSA1 Overview

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Part Image IPP120N20NFD Infineon Technologies AG

Power Field-Effect Transistor, 84A I(D), 200V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB