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IPP126N10N3GXKSA1 - Infineon

Description: IPP126N10N3GXKSA1 N-Channel MOSFET, 58 A, 100 V OptiMOS 3, 3-Pin TO-220 Infineon

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IPP126N10N3GXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220-3
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IPP126N10N3GXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - TO220-3
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IPP126N10N3GXKSA1 Details

  • Manufacturer Part Number:

    IPP126N10N3GXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    70 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    58 A

  • Drain-source On Resistance-Max:

    0.0126 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    232 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP126N10N3GXKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPP126N10N3GXKSA1 is 175°C, as specified in the datasheet.
  • To ensure reliability, follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's power handling at high temperatures.
  • The recommended gate drive voltage for the IPP126N10N3GXKSA1 is between 10V and 15V, as specified in the datasheet.
  • To minimize power losses, optimize the gate drive circuit, use a low-inductance layout, and consider using a gate driver with a high current capability.
  • Yes, the IPP126N10N3GXKSA1 is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance.

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IPP126N10N3GXKSA1 Overview

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Part Image IPP126N10N3G Infineon Technologies AG

Power Field-Effect Transistor, 58A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB