Part Image

IPP12CN10LGXKSA1 - Infineon

Description: MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2

Download IPP12CN10LGXKSA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IPP12CN10LGXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3 HEIGHT 4.57
click to zoom
3D Models
IPP12CN10LGXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-3 HEIGHT 4.57
click to zoom

IPP12CN10LGXKSA1 Details

  • Manufacturer Part Number:

    IPP12CN10LGXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    69 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    276 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP12CN10LGXKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPP12CN10LGXKSA1 is -40°C to 150°C.
  • Proper thermal management can be achieved by ensuring good heat sinking, using a thermal interface material, and keeping the device within the recommended operating temperature range.
  • The recommended gate resistor value for the IPP12CN10LGXKSA1 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IPP12CN10LGXKSA1 can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
  • The maximum allowable voltage transient for the IPP12CN10LGXKSA1 is typically 1.5 times the maximum rated voltage, but it's recommended to consult the datasheet and application notes for specific guidance.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPP12CN10LGXKSA1 Overview

Use the download button to access the IPP12CN10LGXKSA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IPP12, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPP12CN10LGXKSA1

Showing 0 results

IPP12CN10LGXKSA1 Alternates

Showing results

Image Part Number Model
Part Image IPP12CN10LGHKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 69A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IPP12CN10LG Infineon Technologies AG

Power Field-Effect Transistor, 69A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB