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IPP147N12N3GXKSA1 - Infineon

Description: IPP147N12N3GXKSA1 N-Channel MOSFET, 56 A, 120 V OptiMOS 3, 3-Pin I2PAK Infineon

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IPP147N12N3GXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3-2
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IPP147N12N3GXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-3-2
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IPP147N12N3GXKSA1 Details

  • Manufacturer Part Number:

    IPP147N12N3GXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    120 V

  • Drain Current-Max (ID):

    56 A

  • Drain-source On Resistance-Max:

    0.0147 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    224 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP147N12N3GXKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPP147N12N3GXKSA1 is 175°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, ensure good thermal contact between the device and heat sink using a thermal interface material.
  • The maximum current rating of the IPP147N12N3GXKSA1 is 147A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the application's specific requirements.
  • To protect the IPP147N12N3GXKSA1 from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in the application circuit. Additionally, consider using a TVS diode or varistor to protect against voltage spikes and transients.
  • The recommended gate drive voltage for the IPP147N12N3GXKSA1 is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application requirements.

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IPP147N12N3GXKSA1 Overview

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