IPP50R500CE footprint, schematic symbol and 3D model by Infineon

Symbol

click to zoom

PCB Footprints

IPP50R500CE - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220

click to zoom

3D Models

IPP50R500CE - Infineon - 3D model - Transistor Outline, Vertical - PG-TO220

click to zoom

Datasheet Download Datasheet
Stock & Prices Price & Stock for IPP50R500CE
Part Number IPP50R500CE
Manufacturer Infineon
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Transistor Outline, Vertical
Footprint Name Transistor Outline, Vertical - PG-TO220
Released Date Dec 31, 2020
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

IPP50R500CE Details

Manufacturer Part Number:
IPP50R500CE
Pbfree Code:
Yes
Rohs Code:
Yes
Part Life Cycle Code:
Obsolete
Part Package Code:
TO-220AB
Package Description:
GREEN, PLASTIC, TO-220, 3 PIN
Pin Count:
3
ECCN Code:
EAR99
Manufacturer:
Infineon Technologies AG
YTEOL:
0
Avalanche Energy Rating (Eas):
129 mJ
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
500 V
Drain-source On Resistance-Max:
0.5 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-220AB
JESD-30 Code:
R-PSFM-T3
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
24 A
Surface Mount:
NO
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

IPP50R500CE Frequently Asked Questions (FAQs)

The maximum junction temperature of the IPP50R500CE is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) and ensure the heat sink is properly mounted. The datasheet provides guidelines for thermal resistance and heat sink design.
The recommended gate drive voltage for the IPP50R500CE is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's essential to consult the datasheet and application notes for more information.
Yes, the IPP50R500CE can be used in a parallel configuration to increase the current handling capability. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.
The maximum allowed dv/dt for the IPP50R500CE is 10V/ns, as specified in the datasheet. Exceeding this limit can cause the device to malfunction or fail. It's essential to ensure that the device is properly snubbed and that the gate drive circuit is designed to limit dv/dt.

Trust Checks

Expert Contribution

System Verified

Community Approved

IPP50R500CE Overview

Use the download button to access the IPP50R500CE schematic symbol, PCB footprint, and 3D model.

To find more CAD model downloads similar to this part, try a partial part number search, like IPP50, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPP50R500CE

Showing 0 results


Please enter a minimum 3 letters or numbers
← Prev Next →

IPP50R500CE - Infineon

IPP50R500CE Details

IPP50R500CE Frequently Asked Questions (FAQs)

Trust Checks

IPP50R500CE Overview

Parts related to IPP50R500CE