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IPP600N25N3GXKSA1 - Infineon

Description: INFINEON - IPP600N25N3GXKSA1 - MOSFET, N-CH, 250V, 25A, TO220-3

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IPP600N25N3GXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220-3
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IPP600N25N3GXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - TO220-3
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IPP600N25N3GXKSA1 Details

  • Manufacturer Part Number:

    IPP600N25N3GXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP600N25N3GXKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPP600N25N3GXKSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper thermal management, it's essential to provide adequate heat sinking and cooling for the IPP600N25N3GXKSA1. This can be achieved by using a heat sink with a thermal resistance of ≤ 0.5 K/W, and ensuring good thermal contact between the device and the heat sink. Additionally, the device should be operated within the recommended temperature range to prevent overheating.
  • The recommended gate resistor value for the IPP600N25N3GXKSA1 is typically in the range of 10 Ω to 20 Ω. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the IPP600N25N3GXKSA1 can be used in parallel to increase current handling. However, it's essential to ensure that the devices are properly matched and synchronized to prevent uneven current sharing and potential damage. It's recommended to consult the datasheet and application notes for more information on parallel operation.
  • The recommended dead time for the IPP600N25N3GXKSA1 is typically in the range of 1 μs to 3 μs, depending on the specific application and switching frequency. However, the optimal dead time may vary depending on the specific requirements of the application. It's recommended to consult the datasheet and application notes for more information.

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IPP600N25N3GXKSA1 Overview

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