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IPP60R099CPA - Infineon

Description: INFINEON - IPP60R099CPA - Power MOSFET, N Channel, 600 V, 31 A, 0.09 ohm, TO-220, Through Hole

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IPP60R099CPA - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3_2024
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IPP60R099CPA - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-3_2024
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IPP60R099CPA Details

  • Manufacturer Part Number:

    IPP60R099CPA

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    800 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    255 W

  • Pulsed Drain Current-Max (IDM):

    93 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP60R099CPA Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPP60R099CPA is -40°C to 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 300W. Additionally, ensure good airflow around the heat sink to prevent overheating.
  • The recommended gate drive voltage for the IPP60R099CPA is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device. A higher gate drive voltage can reduce switching losses but may also increase the risk of damage.
  • To protect the IPP60R099CPA from overvoltage and overcurrent, it's recommended to use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit. The OVP circuit should be designed to detect voltage levels above the maximum rated voltage of the device, while the OCP circuit should detect current levels above the maximum rated current.
  • The recommended PCB layout for the IPP60R099CPA involves using a multi-layer PCB with a solid ground plane and a separate power plane. The device should be placed close to the power source, and the gate drive circuit should be located near the device. Additionally, ensure that the PCB layout minimizes parasitic inductance and capacitance to prevent unwanted oscillations.

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IPP60R099CPA Overview

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Part Image IPP60R099CPXKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IPP60R099CP Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IPP60R099CPAXK Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB