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IPP60R125CFD7XKSA1 - Infineon

Description: N-Channel 600 V 18A (Tc) 92W (Tc) Through Hole PG-TO220-3

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IPP60R125CFD7XKSA1 - Infineon - PCB symbol
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PCB Footprints
IPP60R125CFD7XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3_2023
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3D Models
IPP60R125CFD7XKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO220-3_2023
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IPP60R125CFD7XKSA1 Details

  • Manufacturer Part Number:

    IPP60R125CFD7XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • Country Of Origin:

    Austria, Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    78 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    92 W

  • Pulsed Drain Current-Max (IDM):

    66 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP60R125CFD7XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPP60R125CFD7XKSA1 is 175°C, as specified in the datasheet.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
  • The recommended gate resistor value depends on the specific application and PCB layout. A typical value is around 10-20 ohms, but it may need to be adjusted based on the specific design requirements.
  • Yes, the IPP60R125CFD7XKSA1 is suitable for high-frequency switching applications up to several hundred kHz. However, the designer should ensure that the MOSFET is properly driven and the PCB layout is optimized to minimize parasitic inductances and capacitances.
  • To protect the IPP60R125CFD7XKSA1 from overvoltage and overcurrent, use a suitable voltage regulator or overvoltage protection circuit, and consider adding a current sense resistor and a fuse or current limiter to prevent excessive current.

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IPP60R125CFD7XKSA1 Overview

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