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IPP60R160P6 - Infineon

Description: MOSFET HIGH POWER_LEGACY

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IPP60R160P6 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - OutlinePG-TO220-3
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3D Models
IPP60R160P6 - Infineon  - 3D model - Transistor Outline, Vertical - OutlinePG-TO220-3
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IPP60R160P6 Details

  • Manufacturer Part Number:

    IPP60R160P6

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    497 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    23.8 A

  • Drain-source On Resistance-Max:

    0.16 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    68 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP60R160P6 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IPP60R160P6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. As a general guideline, Infineon recommends limiting the device's operating area to V_DS ≤ 160 V, I_D ≤ 60 A, and T_J ≤ 175°C to ensure reliable operation.
  • The thermal resistance of the IPP60R160P6 can be calculated using the device's thermal resistance values provided in the datasheet (R_th_JC, R_th_CS, and R_th_SA) and the specific application's thermal interface materials and layout. Infineon provides a thermal resistance calculator tool to help with this calculation.
  • The recommended gate drive voltage for the IPP60R160P6 is typically between 10 V to 15 V, with a current capability of up to 2 A to 5 A, depending on the specific application's switching frequency and load requirements. A higher gate drive voltage can help reduce switching losses, but may also increase gate oxide stress.
  • To ensure the IPP60R160P6's avalanche capability is not exceeded, the device's maximum avalanche energy (E_AS) and avalanche current (I_AS) ratings should not be exceeded. The application's circuit design should be evaluated to ensure that the device is not subjected to excessive voltage or current stress, and that the device's avalanche ratings are not exceeded during normal operation or fault conditions.
  • The recommended PCB layout and thermal management considerations for the IPP60R160P6 include using a thermally optimized PCB layout with a large copper area for heat dissipation, ensuring good thermal contact between the device and the heat sink, and using a heat sink with a high thermal conductivity and sufficient surface area to dissipate heat effectively.

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