Please enter a minimum 3 letters or numbers
Technical Content
Part Image

IPP60R190P6 - Infineon

Description: MOSFET Metal Oxide Semi conductor Field Effect Transistor CoolMOS P6 600VCoolMOS P6 Power Transistor IPP60R190P6

Download IPP60R190P6 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
IPP60R190P6 - Infineon - PCB symbol
click to zoom
PCB Footprints
IPP60R190P6 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220
click to zoom
3D Models
IPP60R190P6 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO220
click to zoom

IPP60R190P6 Details

  • Manufacturer Part Number:

    IPP60R190P6

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    419 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    20.2 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    57 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP60R190P6 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPP60R190P6 is 175°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1 K/W is recommended. Additionally, the device should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.
  • The maximum current rating of the IPP60R190P6 is 60A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
  • To protect the IPP60R190P6 from overvoltage and overcurrent, a suitable voltage regulator and current limiter should be used. Additionally, a fuse or a current-sensing resistor can be used to detect overcurrent conditions.
  • The recommended gate drive voltage for the IPP60R190P6 is between 10V and 15V, as specified in the datasheet. A higher gate drive voltage can improve the device's switching performance.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPP60R190P6 Overview

Use the download button to access the IPP60R190P6 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IPP60, or try a keyword search, such as Power Field-Effect Transistors

Suggested Parts

If you searched for IPP60R190P6, you might also be interested in these parts:
Part Number
B32923C3105M189
GSIB15A60-E3/45
STTH3R06U
UCC28180D
104CDMCCDS-2R2MC
L6563TR
L6566BTR
9-440054-2
LM239D

Parts related to IPP60R190P6

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

IPP60R190P6 Alternates

Showing results

Image Part Number Model
Part Image IPP60R190P6XKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB