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IPP60R210CFD7XKSA1 - Infineon

Description: MOSFET LOW POWER_NEW

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IPP60R210CFD7XKSA1 Details

  • Manufacturer Part Number:

    IPP60R210CFD7XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    49 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.21 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    64 W

  • Pulsed Drain Current-Max (IDM):

    42 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP60R210CFD7XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPP60R210CFD7XKSA1 is 175°C, as specified in the datasheet.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate drive circuit can provide sufficient current to charge the gate capacitance quickly.
  • The recommended gate resistor value depends on the specific application and switching frequency. A typical value is around 10-20 ohms, but it may need to be adjusted based on the specific design requirements.
  • Use a suitable voltage clamp or transient voltage suppressor (TVS) to protect the MOSFET from overvoltage. For overcurrent protection, consider using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The maximum allowable power dissipation of the IPP60R210CFD7XKSA1 depends on the operating conditions, such as temperature and PCB design. Refer to the datasheet for the thermal resistance values and calculate the maximum power dissipation based on the specific application.

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IPP60R210CFD7XKSA1 Overview

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