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IPP65R095C7XKSA1 - Infineon

Description: N-Channel 650 V 24A (Tc) 128W (Tc) Through Hole PG-TO220-3

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IPP65R095C7XKSA1 Details

  • Manufacturer Part Number:

    IPP65R095C7XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    118 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP65R095C7XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPP65R095C7XKSA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
  • The recommended gate resistor value for the IPP65R095C7XKSA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, the IPP65R095C7XKSA1 can be used in a parallel configuration, but it's essential to ensure that the IGBTs are matched and the gate drive circuitry is designed to handle the increased current.
  • The maximum allowable voltage transient for the IPP65R095C7XKSA1 is ±5% of the maximum rated voltage, with a maximum duration of 10 μs.

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