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IPP65R110CFDA - Infineon

Description: MOSFET AUTOMOTIVE

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IPP65R110CFDA - Infineon - PCB symbol
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IPP65R110CFDA - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPP055N03LGXKSA1
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IPP65R110CFDA - Infineon - 3D model - Transistor Outline, Vertical - IPP055N03LGXKSA1
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IPP65R110CFDA Details

  • Manufacturer Part Number:

    IPP65R110CFDA

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • Country Of Origin:

    Austria, Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    845 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    31.2 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    99.6 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP65R110CFDA Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IPP65R110CFDA is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling is crucial for the IPP65R110CFDA. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1 K/W. Also, consider using a thermal interface material to fill any gaps between the device and heat sink.
  • The recommended gate drive voltage for the IPP65R110CFDA is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.
  • Yes, the IPP65R110CFDA can be used in a parallel configuration to increase the overall current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The recommended dead time for the IPP65R110CFDA depends on the specific application and switching frequency. As a general guideline, a dead time of 100-200 ns is recommended to prevent shoot-through currents and ensure reliable operation.

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IPP65R110CFDA Overview

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IPP65R110CFDA Alternates

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Part Image IPP65R110CFDAAKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Image IPP65R110CFDXKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB