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IPP65R190C6XKSA1 - Infineon

Description: Infineon IPP65R190C6XKSA1 N-channel MOSFET Transistor, 20.2 A, 700 V, 3-Pin TO-220 • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free

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IPP65R190C6XKSA1 - Infineon - PCB symbol
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PCB Footprints
IPP65R190C6XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220*
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3D Models
IPP65R190C6XKSA1 - Infineon - 3D model - Transistor Outline, Vertical - TO-220*
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IPP65R190C6XKSA1 Details

  • Manufacturer Part Number:

    IPP65R190C6XKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    485 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    66 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP65R190C6XKSA1 Frequently Asked Questions (FAQs)

  • The IPP65R190C6XKSA1 can operate from -40°C to 150°C, with a maximum junction temperature of 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 0.5 K/W, and ensuring good thermal contact between the IGBT and heat sink. Additionally, the PCB design should allow for good airflow and heat dissipation.
  • The recommended gate resistor value is between 10 Ω and 20 Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce EMI, but may increase switching losses.
  • Yes, the IPP65R190C6XKSA1 can be used in a parallel configuration, but it's essential to ensure that the IGBTs are matched in terms of their electrical characteristics, and that the gate drive and cooling systems are designed to handle the increased current and heat dissipation.
  • The IPP65R190C6XKSA1 can withstand voltage transients up to 1.5 times the maximum rated voltage (1900 V) for a duration of ≤ 10 μs, but it's recommended to use a voltage clamp or snubber circuit to limit voltage transients and ensure reliable operation.

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IPP65R190C6XKSA1 Overview

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