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IPP65R190C7 - Infineon

Description: Infineon IPP65R190C7 MOSFET Transistor

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IPP65R190C7 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3_1
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3D Models
IPP65R190C7 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-3_1
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IPP65R190C7 Details

  • Manufacturer Part Number:

    IPP65R190C7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    57 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    72 W

  • Pulsed Drain Current-Max (IDM):

    49 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP65R190C7 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IPP65R190C7 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling of the IPP65R190C7 is crucial to prevent overheating. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a sufficient thermal conductivity. Additionally, consider using a thermal interface material to fill any gaps between the device and heat sink.
  • The recommended gate drive voltage for the IPP65R190C7 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.
  • Yes, the IPP65R190C7 can be used in a parallel configuration to increase the overall current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The recommended PCB layout for the IPP65R190C7 involves using a symmetrical layout to minimize parasitic inductances and ensure good thermal dissipation. Keep the high-frequency nodes (e.g., gate and drain) as close as possible to the device, and use a solid ground plane to reduce electromagnetic interference (EMI).

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IPP65R190C7 Overview

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