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IPP65R190CFD - Infineon

Description: Infineon IPP65R190CFD N-channel MOSFET Transistor, 17.5 A, 700 V, 3+Tab-Pin TO-220

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PCB Footprints
IPP65R190CFD - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220
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3D Models
IPP65R190CFD - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220
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IPP65R190CFD Details

  • Manufacturer Part Number:

    IPP65R190CFD

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    484 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    17.5 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    151 W

  • Pulsed Drain Current-Max (IDM):

    57.2 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP65R190CFD Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPP65R190CFD is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.
  • The recommended gate drive voltage for the IPP65R190CFD is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IPP65R190CFD, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current-sensing resistor.
  • The maximum allowed dv/dt for the IPP65R190CFD is 10 kV/μs, and it's essential to follow the recommended gate drive and layout guidelines to minimize voltage transients.

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IPP65R190CFD Overview

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Part Image IPP65R190CFDXKSA2 Infineon Technologies AG

Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IPP65R190CFDXKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IPP65R190CFDAAKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB