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IPP80N04S4-04 - Infineon

Description: Infineon IPP80N04S4-04 N-channel MOSFET Transistor, 80 A, 40 V, 3-Pin TO-220

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IPP80N04S4-04 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3-1_1
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IPP80N04S4-04 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-3-1_1
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IPP80N04S4-04 Details

  • Manufacturer Part Number:

    IPP80N04S4-04

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    71 W

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPP80N04S4-04 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPP80N04S4-04 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's recommended to attach a heat sink to the device, especially in high-power applications. The heat sink should be designed to provide a thermal resistance of less than 10 K/W. Additionally, ensure good airflow around the device and avoid blocking the airflow with other components or obstacles.
  • For optimal performance and to minimize electromagnetic interference (EMI), it's recommended to follow a star-point grounding scheme and keep the power traces as short and wide as possible. Additionally, place decoupling capacitors close to the device and use a solid ground plane to reduce noise and EMI.
  • Yes, the IPP80N04S4-04 is designed for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate charge, and output capacitance when designing the application. Additionally, ensure that the device is properly cooled and the PCB layout is optimized for high-frequency operation.
  • To protect the IPP80N04S4-04 from overvoltage and overcurrent, it's recommended to use a voltage regulator or a voltage clamp to limit the voltage to the device's maximum rating. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions. It's also essential to follow proper PCB design and layout guidelines to minimize the risk of electrical overstress.

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