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IPP80N04S404AKSA1 - Infineon

Description: MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T2

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IPP80N04S404AKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3-1_2023
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3D Models
IPP80N04S404AKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-3-1_2023
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IPP80N04S404AKSA1 Details

  • Manufacturer Part Number:

    IPP80N04S404AKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPP80N04S404AKSA1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IPP80N04S404AKSA1 is a TO-220 Full Pack 3-lead package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 4.5mm x 4.5mm.
  • To ensure reliability in high-temperature applications, it is recommended to follow the thermal design guidelines provided in the datasheet, including using a suitable heat sink, ensuring good thermal conductivity, and avoiding thermal hotspots.
  • The maximum allowed voltage transient for the IPP80N04S404AKSA1 is 80V, as specified in the datasheet. Exceeding this value may damage the device.
  • Yes, the IPP80N04S404AKSA1 can be used in a parallel configuration to increase current handling, but it is essential to ensure that the devices are properly matched and that the current sharing is balanced to avoid overheating and reduce reliability.
  • The recommended gate resistor value for the IPP80N04S404AKSA1 is typically in the range of 10Ω to 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce EMI and ringing, while a lower value can improve switching speed.

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